Method for integrating complementary metal-oxide-semiconductor (CMOS) devices with microelectromechanical systems (MEMS) devices using a flat surface above a sacrificial layer

ABSTRACT

An integrated circuit (IC) with an integrated microelectromechanical systems (MEMS) structure is provided. In some embodiments, the IC comprises a semiconductor substrate, a back-end-of-line (BEOL) interconnect structure, the integrated MEMS structure, and a cavity. The BEOL interconnect structure is over the semiconductor substrate, and comprises wiring layers stacked in a dielectric region. Further, an upper surface of the BEOL interconnect structure is planar or substantially planar. The integrated MEMS structure overlies and directly contacts the upper surface of the BEOL interconnect structure, and comprises an electrode layer. The cavity is under the upper surface of the BEOL interconnect structure, between the MEMS structure and the BEOL interconnect structure.

REFERENCE TO RELATED APPLICATIONS

This Application is a Divisional of U.S. application Ser. No.15/716,676, filed on Sep. 27, 2017, which is a Divisional of U.S.application Ser. No. 15/363,571, filed on Nov. 29, 2016 (now U.S. Pat.No. 9,796,582, issued on Oct. 24, 2017). The contents of theabove-referenced Applications are hereby incorporated by reference intheir entirety.

BACKGROUND

Complementary metal-oxide-semiconductor (CMOS) is a technology forconstructing integrated circuits. CMOS technology is used in digitallogic circuits. Furthermore, CMOS technology may be used in conjunctionwith microelectromechanical systems (MEMS) devices. MEMS devices aremicroscopic devices that integrate mechanical and electrical componentsto sense physical quantities and/or to act upon surroundingenvironments. In recent years, MEMS devices have become increasinglycommon. For example, MEMS accelerometers are commonly found in airbagdeployment systems, tablet computers, and smart phones.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 illustrates a cross-sectional view of some embodiments of anintegrated circuit (IC) that comprise complementarymetal-oxide-semiconductor (CMOS) devices integrated with amicroelectromechanical systems (MEMS) device.

FIGS. 2A-2E illustrate cross-sectional views of some other embodimentsof the IC of FIG. 1.

FIGS. 3A-3K illustrate a series of cross-sectional views of someembodiments of a method for manufacturing the IC of FIG. 2A.

FIGS. 4A-4L illustrate a series of cross-sectional views of someembodiments of a method for manufacturing the IC of FIG. 2B.

FIGS. 5A-5L illustrate a series of cross-sectional views of someembodiments of a method for manufacturing the IC of FIG. 2C.

FIG. 6 illustrates a flowchart of some embodiments of the method ofFIGS. 3A-3K.

FIG. 7 illustrates a flowchart of some embodiments of the method ofFIGS. 4A-4L.

FIG. 8 illustrates a flowchart of some embodiments of the method ofFIGS. 5A-5L.

DETAILED DESCRIPTION

The present disclosure provides many different embodiments, or examples,for implementing different features of this disclosure. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Microelectromechanical (MEMS) devices are often packaged with andelectrically coupled to complementary metal-oxide-semiconductor (CMOS)devices. One method for doing so is to bond a MEMS die and a CMOS dietogether and to electrically couple the MEMS die to the CMOS die usingwire bonding. However, wire bonding results in a large amount ofparasitic capacitance that leads to low performance. Further, the methodis performed at the die level, such that the method has high packagingtime and high packaging complexity, thereby leading to high costs.

Another method for packaging and electrically coupling MEMS devices andCMOS devices together is to form the MEMS devices directly on CMOS diesusing sacrificial layers. For example, a sacrificial layer may be formedand patterned over a CMOS die, such that the BEOL interconnect structureof the CMOS die is between the sacrificial layer and a semiconductorsubstrate of the CMOS die. Further, a MEMS structure comprising a MEMSdevice may be conformally formed over the BEOL interconnect structureand the sacrificial layer, and a release hole may be formed extendingthrough the MEMS structure to the sacrificial layer. With the releasehole formed, an etchant may be applied to the sacrificial layer, throughthe release hole, to at least partially remove the sacrificial layer andto form a cavity between the CMOS die and the MEMS structure.

A challenge with foregoing method is that the MEMS structure is formedon a non-flat surface. As such, the MEMS structure is non-planar and hasa step up along sidewalls of the sacrificial layer that remains evenafter the sacrificial layer is removed. This may result inphotolithography and etching process difficulty. Furthermore, the stepup may result in poor anchor support and rigidity for the MEMSstructure. One approach for addressing this challenge is to use adielectric layer of the BEOL interconnect structure for the sacrificiallayer. This allows the MEMS structure to be formed on a flat surface. Onthe other hand, however, wiring layers of the BEOL interconnectstructure may peel, and/or interlayer dielectric (ILD) layers of theCMOS die may become damaged.

In view of the foregoing, the present application, in variousembodiments, is directed towards a method for integrating CMOS deviceswith a MEMS device using a flat surface above a sacrificial layer, aswell as integrated circuits (ICs) resulting from the method. In somefirst embodiments of the method, a BEOL interconnect structure is formedcovering a semiconductor substrate. Forming the BEOL interconnectstructure comprises forming a plurality of wiring layer stacked in afirst BEOL dielectric region of the BEOL interconnect structure. Asacrificial layer is formed over the first BEOL dielectric region. Asecond BEOL dielectric region is formed overlying the sacrificial layer.The second BEOL dielectric region is planarized such that an uppersurface of the second BEOL dielectric region is substantially flat(i.e., planar). A MEMS structure is formed on the upper surface of thesecond BEOL dielectric region, and a cavity etch is performed to removethe sacrificial layer and to form a cavity in place of the sacrificiallayer. In some embodiments, a via is formed extending through the secondBEOL dielectric region, into the first BEOL dielectric region, to a topwiring layer of the BEOL interconnect structure and electricallycoupling the MEMS structure to the top wiring layer.

In some second embodiments of the method, a BEOL interconnect structureis formed covering a semiconductor substrate. Forming the BEOLinterconnect structure comprises forming a plurality of wiring layerstacked in a first BEOL dielectric region of the BEOL interconnectstructure. A trench is formed in the BEOL interconnect structure. Asacrificial layer is formed in the trench of the BEOL interconnectstructure such that the sacrificial layer is inset into the BEOLinterconnect structure. The BEOL interconnect structure and the insetsacrificial layer are coplanarized such that upper surfaces respectivelyof the BEOL interconnect structure and the inset sacrificial layer aresubstantially coplanar. A MEMS structure is formed on the upper surfacesrespectively of the BEOL interconnect structure and the insetsacrificial layer, and a cavity etch is performed to remove thesacrificial layer and to form a cavity in place of the sacrificiallayer. In some embodiments, a via is formed extending into the firstBEOL dielectric region to a top wiring layer of the BEOL interconnectstructure and electrically coupling the MEMS structure to the top wiringlayer.

Advantageously, the first and second embodiments of the method may beperformed at the wafer level for low packaging time and low packagingcomplexity. This, in turn, may lead to low costs. Further, the first andsecond embodiments of the method may advantageously be performed withoutwire bonding, such that parasitic capacitance between MEMS and CMOSdevices may be low. Further yet, the first and second embodiments of themethod may advantageously be performed without an additional waferand/or a bonding process between wafers, such that the method ismonolithic. This, in turn, may lead to low costs. Further yet, formingthe MEMS structure on a planar surface may result in good anchor supportand rigidity for the MEMS structure, as well as well as a high degree offreedom in photolithography and etching processes used to form the MEMSstructure.

With reference to FIG. 1, a cross-sectional view 100 of some embodimentsof an IC comprising a CMOS structure 100 a and a MEMS structure 100 b isprovided. As illustrated, the CMOS structure 100 a includes CMOS devices102. The CMOS devices 102 are arranged over a semiconductor substrate104, recessed below an upper or top surface of the semiconductorsubstrate 104. The CMOS devices 102 may be, for example, insulated-gatefield-effect transistors (IGFETs), metal-oxide-semiconductorfield-effect transistors (MOSFETs), some other transistors, acombination of the foregoing, or the like. The semiconductor substrate104 may be, for example, a bulk substrate of monocrystalline silicon ora bulk substrate of some other semiconductor.

The CMOS structure 100 a also includes a BEOL interconnect structure 106at least partially covering the CMOS devices 102 and the semiconductorsubstrate 104. The BEOL interconnect structure 106 is configured toelectrically couple the CMOS devices 102 to one another and/or to theMEMS structure 100 b. The BEOL interconnect structure 106 comprises aBEOL dielectric region 108 having one or more dielectric layers, suchas, for example, ILD layers and/or passivation layers. Further, the BEOLdielectric region 108 comprises one or more dielectric regions. Forexample, the BEOL dielectric region 108 may comprise a first BEOLdielectric region 108 a and a second BEOL dielectric region 108 b, whichare demarcated by a dashed line 107. The BEOL dielectric region 108 maybe, for example, silicon dioxide, a low κ dielectric, some otherdielectric, a combination of the foregoing, or the like. As used here, alow κ dielectric is a dielectric constant κ less than about 3.9.

Further, the BEOL interconnect structure 106 comprises one or morewiring layers 110 and one or more via layers 112 alternatingly stackedwithin the BEOL dielectric region 108. The wiring layer(s) 110 and thevia layer(s) 112 are conductive and may be, for example, aluminumcopper, copper, aluminum, tungsten, some other conductive material, acombination of the foregoing, or the like. Even more, the wiringlayer(s) 110 are made of individual wires (not individually labeled),and the via layer(s) 112 are made of individual vias (not individuallylabeled). Further, the wiring layer(s) 110 and the via layer(s) 112collectively define conductive paths between the CMOS devices 102 and aMEMS device 113 of the MEMS structure 100 b. In some embodiments, thewiring layer(s) 110 and the via layer(s) 112 also define conductivepaths between a CMOS devices or the MEMS device 113 and an electricaldevice external to the IC.

The MEMS structure 100 b comprises one or more MEMS layers thatcollectively define the MEMS device 113, and that are formed on a planarupper surface 124 of the BEOL interconnect structure 106. In someembodiments, the MEMS structure 100 b comprises a MEMS dielectric region109. The MEMS dielectric region 109 may be, for example, the samematerial as the BEOL dielectric region 108. Further, in someembodiments, the MEMS structure 100 b comprises an electrode layer 114electrically coupled to the BEOL interconnect structure 106 through aninter-device via layer 116. Even more, in some embodiments, the MEMSstructure 100 b comprises an electrode opening 118 exposing a portion ofthe electrode layer 114, thereby allowing an electrical device externalto the IC to electrically couple with the CMOS devices 102 and/or theMEMS device 113.

Returning to the CMOS structure 100 a, the BEOL dielectric region 108also includes a cavity 122, which is surrounded by the BEOL dielectricregion 108 and which is under the planar upper surface 124 of the BEOLinterconnect structure 106. Further, the cavity 122 may, for example,overlie at least one of the wiring layer(s) 110, and/or the lowersurface of the cavity 122 may, for example, be substantially flat orplanar extending to the sidewalls of the cavity 122. In someembodiments, the lower surface of the cavity 122 is defined by an uppersurface of the first BEOL dielectric region 108 a. Further, in someembodiments, the sidewalls of the cavity 122 are defined by the secondBEOL dielectric region 108 b, whereas in other embodiments the BEOLdielectric region 108 is without the second BEOL dielectric region 108 band the sidewalls of the cavity 122 are defined by the first BEOLdielectric region 108 a. Even more, in some embodiments, a releaseopening 123 extends through the MEMS structure and opens the cavity 122to an ambient environment of the IC.

As discussed in detail hereafter, the cavity 122 is formed using asacrificial layer, which is not shown because it is removed duringfabrication. In some first embodiments, the second BEOL dielectricregion 108 b is omitted and the sacrificial layer is inset into thefirst BEOL dielectric region 108 a. In such embodiments, upper surfacesrespectively of the first BEOL dielectric region 108 a and thesacrificial layer are coplanarized, and the MEMS structure 100 b isformed on the substantially coplanar upper surfaces. In secondembodiments, the sacrificial layer is formed over the first BEOLdielectric region 108 a, and the second BEOL dielectric region 108 b isformed covering the first BEOL dielectric region 108 a and thesacrificial layer. In such embodiments, an upper surface of the secondBEOL dielectric region 108 b is planarized, and the MEMS structure 100 bis formed in the substantially planar upper surface. In either the firstor second embodiments, the MEMS structure 100 b is formed on the planarupper surface 124 of the BEOL interconnect structure 106, which overliesthe cavity 122. As such, the MEMS structure 100 b does not have astepped bottom profile, and has good anchor support and rigidity.Furthermore, photolithography and etching processes are simplified whenforming the MEMS structure 100 b.

With reference to FIGS. 2A-2E, cross-sectional views 200A-200E of someother embodiments of the IC of FIG. 1 are provided.

As illustrated by the cross-sectional view 200A of FIG. 2A, the MEMSdevice 113 is a capacitive MEMS device. As described above with respectFIG. 1, the CMOS devices 102 are arranged over a semiconductor substrate104 and covered by a BEOL interconnect structure 106. The BEOLinterconnect structure 106 comprises a BEOL dielectric region 108 with asecond BEOL dielectric region 108 b stacked over a first BEOL dielectricregion 108 a. Further, the BEOL interconnect structure 106 comprises oneor more wiring layers 110 and one or more via layers 112 in the BEOLdielectric region 108. Here, the wiring layer(s) 110 and the vialayer(s) 112 electrically connect the CMOS devices 102 to the MEMsstructure 100 b. Further, in some embodiments, the wiring layer(s) 110comprises one or more capacitive sensing electrodes 202 in a cavity 122between the first BEOL dielectric region 108 a and the second BEOLdielectric region 108 b. For example, the capacitive sensingelectrode(s) 202 may be arranged over the first dielectric BEOL region108 a within the cavity 122.

In operation, a MEMs device 113 of the MEMS structure 100 b thatoverlies the cavity 122 may, for example, move or vibrate within thecavity 122 in response to an external stimulus. This movement orvibration results in a capacitance change that varies predictably independence on the extent of the movement or vibration, such that thecapacitance change can be used by the CMOS devices 102 to measure theexternal stimulus. The external stimulus may be, for example,acceleration and/or movement of the IC, sound waves impinging on theMEMs device 113, or a pressure differential between the cavity 122 andan ambient environment of IC. Alternatively, in operation, the MEMsdevice 113 may, for example, move or vibrate within the cavity 122 inresponse to a voltage from the CMOS devices 102. The MEMs device 113 maybe, for example, a microphone, an accelerometer, a motion sensor, apressure sensor, a gyroscope, or the like.

As illustrated by the cross-sectional view 200B of FIG. 2B, a MEMsstructure 100 b may be electrically coupled to the CMOS devices 102. TheMEMs structure 100 b includes a piezoelectric layer 204 arranged overthe BEOL interconnect structure 106 and the semiconductor substrate 104,and is separated from the cavity 122 by at least a portion of the secondBEOL dielectric region 108 b. In some embodiments, the second BEOLdielectric region 108 b may have an upper portion that covers a portionof the cavity 122. Further, in some embodiments, the upper portion maybe laterally discontinuous directly over the cavity 122. Thepiezoelectric layer 204 may be, for example, aluminum nitride, zincoxide, lead zirconate titanate, some other piezoelectric material, acombination of the foregoing, or the like.

A first electrode layer 114 a and a second electrode layer 114 b arerespectively arranged in and over the piezoelectric layer 204. Further,the first and second electrode layers 114 a, 114 b electrically coupleto the CMOS devices 102 through the BEOL interconnect structure 106. Thefirst and second electrode layers 114 a, 114 b comprise correspondingfirst and second electrodes, and the second electrode layer 114 bfurther comprises one or more through vias 212. At least one of thethrough via(s) 212 extends through the piezoelectric layer 204 to thefirst electrode layer 114 a and electrically couples the first electrodelayer 114 a to the second electrode layer 114 b. The first and secondelectrode layers 114 a, 114 b may be aluminum copper, aluminum,molybdenum, gold, platinum, some other conductive material, acombination of the foregoing, or the like.

As discussed above with respect to FIG. 1, the upper surface 124 of theBEOL dielectric region 108 is planarized such that overlying layers arealso planar and do not suffer a step up. For example, here, thepiezoelectric layer 204 has a planar lower or bottom surface.

As illustrated by the cross-sectional view 200C of FIG. 2C, a variant ofFIG. 2B is provided. Here, in FIG. 2C, the second BEOL dielectric region108 b of FIGS. 2A and 2B is omitted, and the cavity 122 is inset intothe first BEOL dielectric region 108 a. Further, a lower or bottomsurface of the piezoelectric layer 204 is arranged over the cavity 122,on an upper or top surface of the first BEOL dielectric region 108 a.While the cavity 122 is recessed in the BEOL interconnect structure 106,the upper surface of the cavity is defined by the lower or bottomsurface of the piezoelectric layer 204.

As illustrated by the cross-sectional view 200D of FIG. 2D, a variant ofFIG. 2C is provided. Here, the cavity 122 extends through the BEOLinterconnect structure 106 to the semiconductor substrate 104. Thus, abottom surface of the cavity 122 is defined by an upper surface of thesemiconductor substrate 104. Further, a top surface of the cavity 122 isdefined by a lower or bottom surface of a piezoelectric layer 204.

A lateral etch stop layer 216 is arranged in the cavity 122 and definessidewalls of cavity 122. The lateral etch stop layer 216 extendsvertically from the semiconductor substrate 104 to the piezoelectriclayer 204, and extends laterally to enclose the cavity 122. In someembodiments, the lateral etch stop layer 216 is ring-shaped and/or has aU-shaped profile as it extends laterally along a boundary of the cavity122. Further, in some embodiments, an interior of the U-shaped profileis filled with a filler layer 218. The lateral etch stop layer 216 maybe, example, aluminum nitride, aluminum oxide, silicon carbide, or someother material resistant to VHF or BOE. The filler layer 218 may be, forexample, silicon dioxide, a low κ dielectric, some other dielectric, acombination of the foregoing, or the like.

As illustrated by the cross-sectional view 200E of FIG. 2E, a variant ofFIG. 2D is provided in which the cavity 122 extends through thesemiconductor substrate 104. In such embodiments, a MEMS device 113 ofthe MEMs structure 100 b may be, for example, a microphone, a pressuresensor, a gyroscope, or the like.

While FIGS. 1 and 2A-2E were described with a MEMS structure and a MEMSdevice, it is to be appreciated that another device structure may bearranged in place of the MEMS structure in some other embodiments.Further, while FIGS. 1 and 2A-2E were described with a MEMS structureand a MEMS device, it is to be appreciated that the MEMS structure andthe MEMS device may be omitted in some other embodiments.

With reference to FIGS. 3A-3K, a series of cross-sectional views300A-300K of some embodiments of a method for manufacturing the IC ofFIG. 2A is provided.

As illustrated by the cross-sectional view 300A of FIG. 3A, a BEOLinterconnect structure 106 is arranged over a semiconductor substrate104 having CMOS devices 102 arranged atop a semiconductor substrate 104.The BEOL interconnect structure 106 covers the CMOS devices 102, andaccommodates one or more wiring layers 110 and one or more via layers112 in a first BEOL dielectric region 108 a.

The wiring layer(s) 110 and via layer(s) 112 are alternatingly stackedwithin a first BEOL dielectric region 108 a of the BEOL interconnectstructure 106, and are electrically coupled to the CMOS devices 102. Thewiring layer(s) 110 and via layer(s) 112 may also be, for example,copper, aluminum copper, tungsten, some other metal or conductivematerial, a combination of the foregoing, or the like. While a certainnumber of wiring layer and a certain number of via layers are shown inFIG. 3A, it is to be appreciated that more or less wiring layers areamenable, and/or more or less via layers are amenable, in otherembodiments.

The first BEOL dielectric region 108 a comprises one or more dielectriclayers, such as, for example, a plurality of dielectric layers. Furtherthe upper surface of the first BEOL dielectric region 108 a may beplanarized so that the upper surface of the first BEOL dielectric region108 a is substantially flat or planar. The planarization may, forexample, be performed by a chemical mechanical polish (CMP).

As illustrated by the cross-sectional view 300B of FIG. 3B, asacrificial layer 302 is formed (e.g., deposited or grown) over thefirst BEOL dielectric region 108 a. The sacrificial layer 302 may bedeposited or grown by, for example, thermal oxidation, vapor deposition,sputtering, or some other deposition or growth process. In someembodiments, the sacrificial layer 302 is an amorphous metalloid,amorphous carbon (a-C), amorphous silicon (a-Si), a combination of theforegoing, or the like. In other embodiments, the sacrificial layer 302is titanium tungsten (TiW), tungsten (W), germanium (Ge), aluminumcopper (AlCu), a combination of the foregoing, or the like. The materialof the sacrificial layer 302 may, for example, be selected so that thedeposition or growth process can be performed at a process temperatureof less than about 450 degrees Celsius in order to reduce thepossibility of damage to the IC.

Also illustrated by the cross-sectional view 300B of FIG. 3B, thesacrificial layer 302 is patterned over the first BEOL dielectric region108 a. In some embodiments, the sacrificial layer 302 is patterned byphotolithography. Further, in some embodiments, the sacrificial layer302 is patterned such that it has a linear or ring shape.

As illustrated by the cross-sectional view 300C of FIG. 3C, a secondBEOL dielectric region 108 b of the BEOL interconnect structure 106 isformed (e.g., deposited or grown) over the sacrificial layer 302 and thefirst BEOL dielectric region 108 a. In some embodiments, the second BEOLdielectric region 108 b includes one or more additional wiring layers(not shown) and/or one or more via layers (not shown) alternatinglystacked within the second BEOL dielectric region 108 b, as within thefirst BEOL dielectric region 108 a.

As illustrated by the cross-sectional view 300D of FIG. 3D, an uppersurface of the second BEOL dielectric region 108 b is planarized so thatthe second BEOL dielectric region 108 b is substantially flat or planar.Further, the planarization may, for example, be performed by a CMP.

As illustrated by the cross-sectional view 300E of FIG. 3E, a first etchis performed into a BEOL dielectric region 108, comprising the first andsecond BEOL dielectric regions 108 a, 108 b, to form one or moreinter-device opening(s) 304. In one embodiment, the inter-deviceopening(s) 304 extend from an upper surface of the second BEOLdielectric region 108 b, through the second BEOL dielectric region 108b, to at least one wiring layer in the first BEOL dielectric region 108a. In some embodiments, the process for performing the first etchcomprises forming and patterning a photoresist layer over second BEOLdielectric region 108 b, applying an etchant to second BEOL dielectricregion 108 b with the photoresist layer in place, and removing thephotoresist layer.

As illustrated by the cross-sectional view 300F of FIG. 3F, one or moreinter-device vias 116 are respectively formed in the inter-deviceopening(s) 304. For example, a conductive layer may be deposited orgrown in the inter-device opening(s) 304, and planarization (e.g., aCMP) may be performed to coplanarize upper surfaces respectively of theconductive layer and the second BEOL dielectric region 108 b Like thewiring layer(s) 110 and via layer(s) 112, the inter-device via(s) 116may also be, for example, copper, aluminum copper, tungsten, some othermetal or conductive material, a combination of the foregoing, or thelike.

As illustrated by the cross-sectional view 300G of FIG. 3G, an electrodelayer 114 is formed (e.g., deposited or grown) over the BEOLinterconnect structure 106. The electrode layer 114 may be, for example,copper, aluminum copper, tungsten, some other metal or conductivematerial, a combination of the foregoing, or the like.

As illustrated by the cross-sectional view 300H of FIG. 3H, a secondetch is performed into the electrode layer 114 to pattern the electrodelayer 114. In some embodiments, the process for performing the secondetch comprises forming and patterning a photoresist layer over theelectrode layer 114, applying an etchant to the electrode layer 114 withthe photoresist layer in place, and removing the photoresist layer.

As illustrated by the cross-sectional view 300I of FIG. 3I, a MEMSdielectric region 109 is formed (e.g., deposited or grown) over theelectrode layer 114. As discussed with regard to FIG. 2A, the MEMSdielectric region 109 and the electrode layer 114 collectively define aMEMS structure on the planar upper surface of the BEOL interconnectstructure 106. In some embodiments, an upper surface of the MEMSdielectric region 109 may, for example, be planarized so that the uppersurface of the MEMS dielectric region 109 is substantially flat orplanar. Further, the planarization may, for example, be performed by aCMP.

As illustrated by the cross-sectional view 300J of FIG. 3J, a third etchis performed to form an electrode opening 118. In some embodiments, theelectrode opening 118 is formed in the MEMS dielectric region 109, andexposes a portion of the electrode layer 114. For example, a bottomsurface of the electrode opening 118 may be defined by the electrodelayer 114.

Also illustrated by the cross-sectional view 300J of FIG. 3J, a fourthetch (e.g., release etch) is performed to form a release opening 123.The release opening 123 extends through the MEMS dielectric region 109and the second BEOL dielectric region 108 b to expose the sacrificiallayer 302.

As illustrated by the cross-sectional view 300K of FIG. 3K, a fifth etchis performed into the sacrificial layer 302, through the release opening123, to remove the sacrificial layer 302 and to form a cavity 122 inplace of the sacrificial layer 302. In some embodiments, the fifth etchis performed by applying an etchant to the sacrificial layer 302 throughthe release opening 123. In some embodiments, the etchant for the fifthetch is selected based, at least in part, on the material of thesacrificial layer 302. For example, supposing that the sacrificial layer302 is a-C, the fifth etch may be performed using a dry oxygen (O₂)etchant. As another example, supposing the sacrificial layer 302 is a-Sior W, the fifth etch may be performed using a dry fluoric etchant, suchas sulfur hexafluoride (SF₆) gas and/or xenon difluoride (XeF₂) gas. Theetchant may also be a wet etchant. For example, hydrogen peroxide (H₂O₂)may be used in various embodiments in which the sacrificial layer 302 isTiW, W, or Ge. Phosphoric acid (H₃SO₄), nitric acid (H₂NO₃), and/oracetic acid (CH₃OOH) may be used in conjunction with water (H₂O) invarious embodiments in which the sacrificial layer 302 is AlCu.

With reference to FIGS. 4A-4L, a series of cross-sectional views400A-400L of some embodiments of a method for manufacturing the IC ofFIG. 2B is illustrated.

As illustrated by the cross-sectional view 400A of FIG. 4A, a BEOLinterconnect structure 106 is arranged over a semiconductor substrate104 having CMOS devices 102. The BEOL interconnect structure 106comprises a first BEOL dielectric region 108 a, as well as one or morewiring layers 110 and one or more via layers 112 alternatingly stackedwithin the first BEOL dielectric region 108 a.

As illustrated by the cross-sectional view 400B of FIG. 4B, asacrificial layer 302 is formed (e.g., deposited or grown) over the BEOLinterconnect structure 106. In some embodiments, the sacrificial layer302 comprises an amorphous metalloid, amorphous carbon (a-C), amorphoussilicon (a-Si), a combination of the foregoing, or the like. In otherembodiments, the sacrificial layer 302 may be titanium tungsten (TiW),tungsten (W), germanium (Ge), aluminum copper (AlCu), a combination ofthe foregoing, or the like. The material of the sacrificial layer 302may, for example, be selected so that the deposition or growth processcan be performed at a process temperature of less than 450 degreesCelsius in order to avoid damage to the BEOL interconnect structure.

As illustrated by the cross-sectional view 400C of FIG. 4C, a first etchis performed into the sacrificial layer 302 to pattern the sacrificiallayer 302. In some embodiments, the process for performing the firstetch comprises forming and patterning a photoresist layer over thesacrificial layer 302, applying an etchant to the sacrificial layer 302with the photoresist layer in place, and removing the photoresist layer.The sacrificial layer 302 may be patterned, for example, to have a lineor ring shape.

As illustrated by the cross-sectional view 400D of FIG. 4D, a secondBEOL dielectric region 108 b of the BEOL interconnect structure 106 isformed (e.g., deposited or grown) over the sacrificial layer 302 and thefirst BEOL dielectric region 108 a. In some embodiments, the process forforming the second BEOL dielectric region 108 b comprises depositing orgrowing the second BEOL dielectric region 108 b, and subsequentlyperforming a planarization into an upper or top surface of the secondBEOL dielectric region 108 b such that the upper or top surface of thesecond BEOL dielectric region 108 b is flat. The second BEOL dielectricregion 108 b may be deposited or grown by, for example, thermaloxidation, vapor deposition, sputtering, or some other deposition orgrowth process.

As illustrated by the cross-sectional view 400E of FIG. 4E, a firstpiezoelectric layer 204 a is deposited over a BEOL dielectric region 108of the BEOL interconnect structure 106, comprising the first and secondBEOL dielectric regions 108 a, 108 b. In some embodiments, the firstpiezoelectric layer 204 a is formed of aluminum nitride, zinc oxide,lead zirconate titanate, a combination of the foregoing, or the like.Further, in some embodiments, the first piezoelectric layer 204 a isformed by sputtering or vapor deposition. In some embodiment, the firstpiezoelectric layer 204 a may be a seed layer used to grow asubsequently formed piezoelectric layer.

As illustrated by the cross-sectional view 400F of FIG. 4F, a secondetch is performed into the first piezoelectric layer 204 a and the BEOLdielectric region 108 to form one or more inter-device openings 304. Insome embodiment, the inter-device opening(s) 304 extend from an uppersurface of the first piezoelectric layer 204 a, through the firstpiezoelectric layer 204 a and the second BEOL dielectric region 108 b,to a top wiring layer in the first BEOL dielectric region 108 a, therebyexposing the top wiring layer. In some embodiments, the process forperforming the second etch comprises forming and patterning aphotoresist layer over the first piezoelectric layer 204 a, applying anetchant to first piezoelectric layer 204 a and BEOL dielectric region108 with the photoresist layer in place, and removing the photoresistlayer.

As illustrated by the cross-sectional view 400G of FIG. 4G, one or moreinter-device vias 116 are respectively formed in the inter-deviceopening(s) 304. Like the wiring layer(s) 110 and via layer(s) 112, theinter-device via(s) 116 may be, for example, copper, aluminum copper,tungsten, some other metal or conductive material, a combination of theforegoing, or the like.

As illustrated by the cross-sectional view 400H of FIG. 4H, a firstelectrode layer 114 a is formed over the first piezoelectric layer 204a. Further, the first electrode layer 114 a is formed electricallycoupled to the inter-device via(s) 116, and further electrically coupledto the top wiring layer in the first BEOL dielectric region 108 a by theinter-device via(s) 116. The first electrode layer 114 a may, forexample, be formed of molybdenum, aluminum, gold, or platinum, or thelike. Further, the first electrode layer 114 a may, for example, beformed by a dual-damascene-like process, a single damascene-likeprocess, or deposition and patterning process.

As illustrated by the cross-sectional view 400I of FIG. 4I, a secondpiezoelectric layer 204 b is formed over the first electrode layer 114a. The second piezoelectric layer 204 b may, for example, be the samematerial as the first piezoelectric layer 204 a, and/or may be, forexample, formed patterned. For example, in one embodiment, a third etchis performed into the second piezoelectric layer 204 b to form one ormore through-via openings 410 exposing the first electrode layer 114 a.In some embodiments, the process for performing the third etch comprisesforming and patterning a photoresist layer over the second piezoelectriclayer 204 b, applying an etchant to the second piezoelectric layer 204 bwith the photoresist layer in place, and removing the photoresist layer.

As illustrated by the cross-sectional view 400J of FIG. 4J, a secondelectrode layer 114 b is formed over the second piezoelectric layer 204b. As discussed with regard to FIG. 2B, the first and second electrodelayers 114 a, 114 b and the first and second piezoelectric layers 204 a,204 b form a MEMS structure. Further, the second electrode layer 114 bis formed lining the through-via opening(s) 410, such that the secondelectrode layer 114 b is electrically coupled to the first electrodelayer 114 a. The second electrode layer 114 b may, for example, beformed conformally lining the through-via opening(s) 410, and/or may,for example, be formed of aluminum copper, molybdenum, aluminum, gold,or a combination of the foregoing.

In some embodiments, the process for forming the second electrode layer114 b comprises depositing or growing the second electrode layer 114 b,and subsequently patterning the second electrode layer 114 b. The secondelectrode layer 114 b may, for example, be deposited or grown by, forexample, sputtering or vapor deposition. Further, the second electrodelayer 114 b may, for example, be patterned using photolithography.

As illustrated by the cross-sectional view 400K of FIG. 4K, a fourthetch is performed through the first and second piezoelectric layers 204a, 204 b and the second BEOL dielectric region 108 b to form a releaseopening 123 exposing the sacrificial layer 302. The process forperforming the fourth etch may comprise, for example, forming andpatterning a photoresist layer over the second piezoelectric layer 204b, applying an etchant to the first and second piezoelectric layers 204a, 204 b and the second BEOL dielectric region 108 b with thephotoresist layer in place, and removing the photoresist layer.

As illustrated by the cross-sectional view 400L of FIG. 4L, a fifth etch(e.g., cavity etch) is performed into the sacrificial layer 302, throughthe release opening 123, to remove the sacrificial layer 302 and to forma cavity 122 in place of the sacrificial layer 302. In some embodiments,the fifth etch is performed by applying an etchant to the sacrificiallayer 302 through the release opening 123. As described above, in someembodiments, the etchant for the fifth etch is selected based, at leastin part, on the material of the sacrificial layer 302.

Because the second BEOL dielectric region 108 b is formed over thesacrificial layer 302, the resulting IC has a cavity 122 that isbordered by the dielectric region on all sides. Further, because aplanarization is performed into an upper or top surface of the secondBEOL dielectric region 108 b, the MEMS structure is formed on asubstantially planar or flat surface and does not suffer a step up andhas good anchor support and rigidity.

With reference to FIGS. 5A-5L, a series of cross-sectional views500A-500L of some embodiments of a method for manufacturing the IC ofFIG. 2C is illustrated.

As illustrated by cross-sectional view 500A of FIG. 5A, a BEOLinterconnect structure 106 is arranged over a semiconductor substrate104 having CMOS devices 102. The BEOL interconnect structure 106comprises a BEOL dielectric region 108, as well as one or more wiringlayer(s) 110 and one or more via layer(s) 112 alternatingly stackedwithin the BEOL dielectric region 108.

As illustrated by the cross-sectional view 500B of FIG. 5B, a first etchis performed to form a trench 502 in the BEOL dielectric region 108. Thetrench 502 may, for example, have a line or ring shape. In someembodiments, the process for performing the first etch comprises formingand patterning a photoresist layer over the BEOL dielectric region 108,applying an etchant to the BEOL dielectric region 108 with thephotoresist layer in place, and removing the photoresist layer.

As illustrated by the cross-sectional view 500C of FIG. 5C, asacrificial layer 302 is formed (e.g., deposited or grown) over the BEOLinterconnect structure 106 and filling the trench 502. In someembodiments, the sacrificial layer 302 is an amorphous metalloid,amorphous carbon (a-C), amorphous silicon (a-Si), a combination of theforegoing, or the like. In other embodiments, the sacrificial layer 302is titanium tungsten (TiW), tungsten (W), germanium (Ge), aluminumcopper (AlCu), a combination of the foregoing, or the like. The materialof the sacrificial layer 302 may, for example, be selected so that thedeposition or growth process can be performed at a process temperatureof less than 450 degrees Celsius.

As illustrated by the cross-sectional view 500D of FIG. 5D, the BEOLdielectric region 108 and the sacrificial layer 302 are planarized, suchthat upper or top surfaces respectively of the BEOL dielectric region108 and the sacrificial layer 302 are coplanar.

As illustrated by the cross-sectional view 500E of FIG. 5E, a firstpiezoelectric layer 204 a is formed (e.g., deposited or grown) over theBEOL dielectric region 108. In some embodiments, the first piezoelectriclayer 204 a is formed of aluminum nitride, zinc oxide, lead zirconatetitanate, or the like. Further, in some embodiments, the firstpiezoelectric layer 204 a is formed by sputtering or vapor deposition.In some embodiment, the first piezoelectric layer 204 a may be a seedlayer used to grow a subsequently formed piezoelectric layer.

As illustrated by the cross-sectional view 500F of FIG. 5F, a secondetch is performed into the first piezoelectric layer 204 a and the BEOLdielectric region 108 to form one or more inter-device openings 304. Insome embodiments, the inter-device opening(s) 304 extend from an uppersurface of the first piezoelectric layer 204 a, through the firstpiezoelectric layer 204 a, to a top wiring layer in the BEOL dielectricregion 108, thereby exposing the top wiring layer. In some embodiments,the process for performing the second etch comprises forming andpatterning a photoresist layer over the first piezoelectric layer 204 a,applying an etchant to first piezoelectric layer 204 a and the BEOLdielectric region 108 with the photoresist layer in place, and removingthe photoresist layer.

As illustrated by the cross-sectional view 500G of FIG. 5G, one or moreinter-device via(s) 116 are respectively formed in the inter-deviceopening(s) 304 Like the wiring layer(s) 110 and via layer(s) 112, theinter-device via(s) 116 may also be, for example, copper, aluminumcopper, tungsten, some other metal or conductive material, a combinationof the foregoing, or the like.

As illustrated by the cross-sectional view 500H of FIG. 5H, a firstelectrode layer 114 a is formed over the first piezoelectric layer 204a. Further, the first electrode layer 114 a is formed electricallycoupled to the inter-device via(s) 116, and further electrically coupledto the top wiring layer by the inter-device via(s) 116. The firstelectrode layer 114 a may, for example, be formed of molybdenum,aluminum, gold, platinum, or the like. Further, the first electrodelayer 114 a may, for example, be formed by a dual-damascene-likeprocess, a single damascene-like process or deposition and patterningprocess.

As illustrated by the cross-sectional view 500I of FIG. 5I, a secondpiezoelectric layer 204 b is formed over the first electrode layer 114a. The second piezoelectric layer 204 b may, for example, be the samematerial as the first piezoelectric layer 204 a, and/or may, forexample, may be patterned. For example, in some embodiments, a thirdetch is performed through the second piezoelectric layer 204 b to formone or more through-via openings 410 exposing the first electrode layer114 a. In some embodiments, the process for performing the third etchcomprises forming and patterning a photoresist layer over the secondpiezoelectric layer 204 b, applying an etchant to the secondpiezoelectric layer 204 b with the photoresist layer in place, andremoving the photoresist layer.

As illustrated by the cross-sectional view 500J of FIG. 5J, a secondelectrode layer 114 b is formed over the second piezoelectric layer 204b. As discussed with regard to FIG. 2C, the first and second electrodelayers 114 a, 114 b and the first and second piezoelectric layers 204 a,204 b form a MEMS structure. Further, the second electrode layer 114 bis formed lining the through-via opening(s) 410, such that the secondelectrode layer 114 b is electrically coupled to the first electrodelayer 114 a. The second electrode layer 114 b may, for example, beformed conformally lining the through-via opening(s) 410, and/or may,for example, be formed of aluminum copper, molybdenum, aluminum, orgold.

In some embodiments, the process for forming the second electrode layer114 b comprises depositing or growing the second electrode layer 114 b,and subsequently patterning the second electrode layer 114 b. The secondelectrode layer 114 b may, for example, be deposited or grown by, forexample, sputtering or vapor deposition. Further, the second electrodelayer 114 b may, for example, be patterned using photolithography.

As illustrated by the cross-sectional view 500K of FIG. 5K, a fourthetch is performed through the first and second piezoelectric layers 204a, 204 b to form a release opening 123 exposing the sacrificial layer302.

As illustrated by the cross-sectional view 500L of FIG. 5L, a fifth etchis performed into the sacrificial layer 302, through the release opening123, to remove the sacrificial layer 302 and to form a cavity 122 inplace of the sacrificial layer 302. In some embodiments, the fifth etchis performed by applying an etchant to the sacrificial layer 302 throughthe release opening 123. As described above, in some embodiments, theetchant for the fifth etch is selected based, at least in part, on thematerial of the sacrificial layer 302.

Because the sacrificial layer 302 is formed inset into the BEOLdielectric region 108, a bottom surface of the cavity 122 and sidewallsof the cavity 122 are defined by the BEOL dielectric region 108.Further, because a planarization is performed to coplanarize uppersurfaces respectively of the sacrificial layer 302 and the BEOLdielectric region 108, the MEMS structure is formed on a substantiallyplanar or flat surface and does not suffer a step up and has good anchorsupport and rigidity.

With reference to FIG. 6, a flowchart 600 of some embodiments of themethod of FIGS. 3A-3K is provided.

At 602, a back-end-of-line (BEOL) interconnect structure is formedcovering a semiconductor substrate. The BEOL interconnect structureincludes a first BEOL dielectric region. See, for example, FIG. 3A.

At 604, a sacrificial layer is formed over the first BEOL dielectricregion. See, for example, FIG. 3B.

At 606, a second BEOL dielectric region of the BEOL interconnectstructure is formed covering the sacrificial layer and the first BEOLdielectric region. See, for example, FIG. 3C.

At 608, an upper surface of the second BEOL dielectric region isplanarized. See, for example, FIG. 3D.

At 610, a MEMS structure is formed on the planar upper surface of thesecond BEOL dielectric region. See, for example, FIG. 3J.

At 612, a cavity etch is performed into the sacrificial layer, throughthe MEMS structure, to remove the sacrificial layer and to form a cavityin place of the sacrificial layer. See, for example, FIGS. 3J and 3K.

With reference to FIG. 7, a flowchart 700 of some embodiments of themethod of FIGS. 4A-4L is provided.

At 702, a BEOL interconnect structure is formed covering a semiconductorsubstrate. The BEOL interconnect structure includes one or more wiringlayers stacked in a first BEOL dielectric region. See, for example, FIG.4A.

At 704, a sacrificial layer is formed over the first BEOL dielectriclayer. See, for example, FIG. 4B.

At 706, the sacrificial layer is patterned. See, for example, FIG. 4C.

At 708, a second BEOL dielectric region of the BEOL interconnectstructure is formed covering the sacrificial layer. The second BEOLdielectric region is then planarized. See, for example, FIG. 4D.

At 710, a first piezoelectric layer is formed over the second BEOLdielectric region. See, for example, FIG. 4E.

At 712, a first electrode layer is formed over the first piezoelectriclayer. See, for example, FIG. 4H.

At 714, a second piezoelectric layer is formed over the first electrodelayer. See, for example, FIG. 4I.

At 716, a second electrode layer is layer is formed over the secondpiezoelectric layer. See, for example, FIG. 4J.

At 718, a cavity etch is performed to remove the sacrificial layer andto form a cavity in place of the sacrificial layer. See, for example,FIGS. 4K and 4L.

With reference to FIG. 8, a flowchart 800 of some embodiments of themethod of FIGS. 5A-5L is provided.

At 802, a BEOL interconnect structure is formed covering a semiconductorsubstrate and having one or more wiring layers stacked in a BEOLdielectric region. See, for example, FIG. 5A.

At 804, a trench is formed in the BEOL dielectric region. See forexample, FIG. 5B.

At 806, a sacrificial layer is formed covering the BEOL dielectricregion and filling the trench. See, for example, FIG. 5C.

At 808, a planarization is performed into upper surfaces respectively ofthe BEOL dielectric region and the sacrificial layer to coplanarize theupper surfaces. See, for example, FIG. 5D

At 810, a first piezoelectric layer is formed over the BEOL dielectricregion. See, for example, FIG. 5E.

At 812, a first electrode layer is formed over the first piezoelectriclayer. See, for example, FIG. 5H.

At 814, a second piezoelectric layer is formed over the first electrodelayer. See, for example, FIG. 5I.

At 816, a second electrode layer is layer is formed over the secondpiezoelectric layer. See, for example, FIG. 5J.

At 818, a cavity etch is performed to remove the sacrificial layer andto form a cavity in place of the sacrificial layer. See, for example,FIGS. 5K and 5L.

While the methods described by the flowcharts 600, 700, 800 of FIGS. 6-8are illustrated and described herein as a series of acts or events, itwill be appreciated that the illustrated ordering of such acts or eventsare not to be interpreted in a limiting sense. For example, some actsmay occur in different orders and/or concurrently with other acts orevents apart from those illustrated and/or described herein. Further,not all illustrated acts may be required to implement one or moreaspects or embodiments of the description herein, and one or more of theacts depicted herein may be carried out in one or more separate actsand/or phases.

In view of the foregoing, in various embodiments of the presentapplication provide a method for manufacturing an IC. A BEOLinterconnect structure is formed covering a semiconductor substrate,where the BEOL interconnect structure comprises wiring layers stacked ina first dielectric region. A sacrificial layer is formed over the firstdielectric region. A second dielectric region is formed covering thesacrificial layer and the first dielectric region. A planarization isperformed into an upper surface of the second dielectric region toplanarize the upper surface of the second dielectric region. A MEMSstructure on the planar upper surface of the second dielectric region. Acavity etch is performed into the sacrificial layer, through the MEMSstructure, to remove the sacrificial layer and to form a cavity in placeof the sacrificial layer.

Further, other embodiments of the present application provide anothermethod for manufacturing an IC. A BEOL interconnect structure is formedcovering a semiconductor substrate, where the BEOL interconnectstructure comprises wiring layers stacked in a dielectric region. Anetch is performed into the dielectric region to form a trench in thedielectric region. A sacrificial layer is formed over the dielectricregion and filling the trench. A planarization is performed into thedielectric region and the sacrificial layer to coplanarize uppersurfaces respectively of the dielectric region and the sacrificiallayer. A MEMS structure is formed over the planar upper surfacesrespectively of the dielectric region and the sacrificial layer. Acavity etch is performed into the sacrificial layer, through the MEMSstructure, to remove the sacrificial layer and to form a cavity in placeof the sacrificial layer.

Further yet, other embodiments of the present application provideanother IC. A BEOL interconnect structure is over a semiconductorsubstrate, where the BEOL interconnect structure comprises wiring layersstacked in a dielectric region, and where an upper surface of the BEOLinterconnect structure is planar. A MEMS structure is over the uppersurface of the BEOL interconnect structure, where the MEMS structurecomprises an electrode layer. A cavity is under the upper surface of theBEOL interconnect structure, between the MEMS structure and the BEOLinterconnect structure.

Further yet, other embodiments of the present application provideanother IC. The other IC includes a semiconductor substrate, a BEOLinterconnect structure, a MEMS structure, and a cavity. The BEOLinterconnect structure is over the semiconductor substrate, and includeswiring layers stacked in a dielectric region. An upper surface of theBEOL interconnect structure is planar or substantially planar. The MEMSstructure overlies and directly contacts the upper surface of the BEOLinterconnect structure. The MEMS structure includes an electrode layer.The cavity is under the upper surface of the BEOL interconnectstructure, between the MEMS structure and the BEOL interconnectstructure. In an embodiment, an inter-device via extends from contactwith the electrode layer, into the dielectric region, to contact with atop wiring layer of the BEOL interconnect structure. In an embodiment,the dielectric region includes a first dielectric region accommodatingthe wiring layers and defining a bottom surface of the cavity, whereinthe dielectric region further includes a second dielectric regiondefining sidewalls of the cavity and a top surface of the cavity. In anembodiment, the dielectric region defines a bottom surface of the cavityand sidewalls of the cavity, wherein a bottom surface of the MEMSstructure defines a top surface of the cavity. In an embodiment, theMEMS structure includes a piezoelectric layer defining the bottomsurface of the MEMS structure and directly contacting the upper surfaceof the BEOL interconnect structure. In an embodiment, the MEMS structureincludes: a seed layer over the upper surface of the BEOL interconnectstructure, wherein the electrode layer is over the seed layer; apiezoelectric layer covering the electrode layer and the seed layer; anda second electrode layer over the piezoelectric layer, and extendingthrough the piezoelectric layer to electrically couple with theelectrode layer. In an embodiment, the second electrode layer has aU-shaped profile extending through the piezoelectric layer to directcontact with the electrode layer. In an embodiment, the IC furtherincludes a lateral etch stop layer extending vertically from directcontact with the semiconductor substrate to direct contact with the MEMSstructure, wherein the lateral etch stop layer includes a pair ofsegments defining sidewalls of the cavity, and wherein the segments ofthe lateral etch stop layer are respectively on opposite sides of thecavity.

Further yet, other embodiments of the present application provideanother IC. The IC includes a semiconductor substrate, a BEOLinterconnect structure, and a MEMS structure. The BEOL interconnectstructure is over the semiconductor substrate, and includes a first ILDlayer, a second ILD layer, a via, and a plurality of wiring layers. Thewiring layers are stacked in the first ILD layer. The second ILD layeroverlies the first ILD layer. The via extends through the second ILDlayer, from a top wire of the wiring layers to a top surface of thesecond ILD layer. The first and second ILD layers collectively define acavity. The second ILD layer defines sidewalls of the cavity and a topsurface of the cavity. The MEMS structure overlies and directly contactsthe top surface of the second ILD layer. An interface at which the MEMSstructure directly contacts the top surface of the second ILD layer isplanar or substantially planar continuously from the via to a locationoverlying the cavity. The MEMS structure is electrically coupled to thewiring layers by the via. In an embodiment, the second ILD layercompletely covers the wiring layers and has a pair of outer sidewallsrespectively on opposite sides of the cavity, wherein the outersidewalls of the second ILD layer are respectively aligned with outersidewalls of the first ILD layer, respectively aligned with outersidewalls of the semiconductor substrate, and respectively aligned withouter sidewalls of the MEMS structure. In an embodiment, the MEMSstructure defines sidewalls of a release opening that overlies thecavity and that opens into the cavity, wherein the release openingextends through the MEMS structure from a top of the MEMS structure to abottom of the MEMS structure, and wherein a bottommost surface of theMEMS structure is continuous, and is planar or substantially planar,from one of the outer sidewalls of the second ILD layer to the releaseopening. In an embodiment, the second ILD layer further defines thesidewalls of the release opening, wherein portions of the sidewallsdefined by the MEMS structure are continuous with portions of thesidewalls defined by the second ILD layer. In an embodiment, the MEMSstructure includes: an electrode layer overlying and directly contactingthe via and the top surface of the second ILD layer, wherein theelectrode layer further overlies the cavity; and a MEMS dielectric layercovering and directly contacting the electrode layer, wherein the MEMSdielectric layer further directly contacts the top surface of the secondILD layer. In an embodiment, the MEMS structure includes: a firstpiezoelectric layer overlying and directly contacting the top surface ofthe second ILD layer; a first electrode layer overlying and directlycontacting the first piezoelectric layer and the via; a secondpiezoelectric layer overlying and directly contacting the firstpiezoelectric layer and the first electrode layer; and a secondelectrode layer overlying and directly contacting the secondpiezoelectric layer, wherein the second electrode layer protrudesthrough the second piezoelectric layer to direct contact with the firstelectrode layer. In an embodiment, the second electrode layer has aU-shaped profile while protruding through the second piezoelectric layerto direct contact with the first electrode layer.

Further yet, other embodiments of the present application provideanother IC. The IC includes a semiconductor substrate, a BEOLinterconnect structure, and a MEMS structure. The BEOL interconnectstructure is over the semiconductor substrate, and includes an ILDlayer, a via, and a plurality of wiring layers. The wiring layers arestacked in the ILD layer, and the via extends through the ILD layer,from a top wire of the wiring layers to a top surface of the ILD layer.The MEMS structure overlies and directly contacts the top surface of theILD layer. An interface at which the MEMS structure directly contactsthe top surface of the ILD layer is planar or substantially planarcontinuously from the via to an inner sidewall of the ILD layer. The ILDlayer and the MEMS structure collectively define a cavity. The ILD layerdefines a bottom surface of the cavity, and further defines sidewalls ofthe cavity in part by the inner sidewall. The MEMS structure defines atop surface of the cavity, and the MEMS structure is electricallycoupled to the wiring layers by the via. In an embodiment, the MEMSstructure further includes a piezoelectric layer overlying and directlycontacting the top surface of the ILD layer, wherein the interface is atleast partially defined by the ILD layer and the piezoelectric layer. Inan embodiment, the ILD layer has a pair of outer sidewalls respectivelyon opposite sides of the cavity, wherein the outer sidewalls of the ILDlayer are respectively aligned with outer sidewalls of the semiconductorsubstrate and are respectively aligned with outer sidewalls of thepiezoelectric layer. In an embodiment, the MEMS structure defines arelease opening overlying the cavity and opening into the cavity,wherein the release opening extends through the MEMS structure from atop of the MEMS structure to a bottom of the MEMS structure, and whereinthe interface is continuous, and is planar or substantially planar, fromone of the outer sidewalls of the ILD layer to the release opening. Inan embodiment, the MEMS structure includes: a first piezoelectric layeroverlying and directly contacting the top surface of the ILD layer; afirst electrode layer overlying and directly contacting the firstpiezoelectric layer and the via; a second piezoelectric layer overlyingand directly contacting the first piezoelectric layer and the firstelectrode layer; and a second electrode layer overlying and directlycontacting the second piezoelectric layer, wherein the second electrodelayer protrudes through the second piezoelectric layer to direct contactwith the first electrode layer.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the various embodiments introducedherein. Those skilled in the art should also realize that suchequivalent constructions do not depart from the spirit and scope of thepresent disclosure, and that they may make various changes,substitutions, and alterations herein without departing from the spiritand scope of the present disclosure.

What is claimed is:
 1. A method for manufacturing an integrated circuit(IC), the method comprising: forming a back-end-of-line (BEOL)interconnect structure covering a semiconductor substrate, wherein theBEOL interconnect structure comprises wiring layers stacked in adielectric region; performing an etch into the dielectric region to forma trench in the dielectric region; forming a sacrificial layer over thedielectric region and filling the trench; performing a planarizationinto the dielectric region and the sacrificial layer to coplanarizeupper surfaces respectively of the dielectric region and the sacrificiallayer; forming a microelectromechanical systems (MEMS) structure overthe coplanarized upper surfaces respectively of the dielectric regionand the sacrificial layer, wherein the forming of the MEMS structurecomprises: forming a seed layer over the coplanarized upper surfacesrespectively of the dielectric region and the sacrificial layer; forminga first electrode layer over the seed layer; and forming a piezoelectriclayer covering the first electrode layer and the seed layer; andperforming a cavity etch into the sacrificial layer, through the MEMSstructure, to remove the sacrificial layer and to form a cavity in placeof the sacrificial layer.
 2. The method according to claim 1, whereinforming the MEMS structure comprises: forming a second electrode layerover the piezoelectric layer, and further extending through thepiezoelectric layer to electrically couple with the first electrodelayer.
 3. The method according to claim 1, wherein the seed layercomprises a piezoelectric material.
 4. The method according to claim 1,wherein forming the first electrode layer comprises: depositing orgrowing the first electrode layer over the seed layer; and performing anetch into the first electrode layer to pattern the first electrodelayer, wherein the piezoelectric layer is formed with a bottom surfacecontacting the seed layer and the first electrode layer.
 5. The methodaccording to claim 1, wherein the first electrode layer is formedelectrically coupled to a top wiring layer of the back-end-of-line(BEOL) interconnect structure through an inter-device via.
 6. The methodaccording to claim 5, wherein forming the MEMS structure comprises:performing an etch into the seed layer and the dielectric region to forman opening exposing the top wiring layer; and forming the inter-devicevia filling the opening, wherein the first electrode layer is formedover and contacting the inter-device via.
 7. The method according toclaim 1, wherein the seed layer is between and directly contacts a lowersurface of the piezoelectric layer and the coplanarized upper surfaces.8. The method according to claim 1, wherein the piezoelectric layerwraps around a top of the first electrode layer.
 9. A method formanufacturing an integrated circuit (IC), the method comprising: forminga back-end-of-line (BEOL) interconnect structure and a sacrificial layeroverlying a semiconductor substrate, wherein the BEOL interconnectstructure comprises a dielectric layer, and further comprises multiplewires and multiple vias alternatingly stacked in the dielectric layer,and wherein the sacrificial layer is in the dielectric layer; performinga planarization into the dielectric layer and/or the sacrificial layerto form a planarized surface; forming a microelectromechanical systems(MEMS) structure overlying the sacrificial and dielectric layers,directly on the planarized surface, wherein the forming of the MEMSstructure comprises: depositing a first MEMS layer over and directlycontacting the planarized surface; forming an inter-device via extendingthrough the first MEMS layer and the planarized surface to a top wire ofthe BEOL interconnect structure; and forming a first-level electrode onthe first MEMS layer, wherein the first-level electrode directlycontacts the inter-device via and is electrically coupled to the topwire of the BEOL interconnect structure through the inter-device via;and removing the sacrificial layer after the forming of the MEMSstructure to form a cavity in place of the sacrificial layer.
 10. Themethod according to claim 9, wherein the forming of the BEOLinterconnect structure and the sacrificial layer comprises: forming thedielectric layer over the semiconductor substrate; patterning thedielectric layer to form a trench; and forming the sacrificial layercovering the dielectric layer and filling the trench, wherein theplanarization is performed into the sacrificial layer until thedielectric layer is reached.
 11. The method according to claim 9,wherein the forming of the BEOL interconnect structure and thesacrificial layer comprises: forming a first dielectric portion of thedielectric layer over the semiconductor substrate; forming thesacrificial layer covering the first dielectric portion; and forming asecond dielectric portion of the dielectric layer covering the firstdielectric portion and the sacrificial layer, wherein the planarizationis performed into the second dielectric portion and stops beforereaching the sacrificial layer.
 12. The method according to claim 9,wherein the forming of the MEMS structure comprises: forming a pluralityof first-level electrodes on the first MEMS layer, where the pluralityof first-level electrodes comprise the first-level electrode.
 13. Themethod according to claim 9, wherein the first MEMS layer comprises apiezoelectric material.
 14. The method according to claim 12, furthercomprising: depositing a second MEMS layer over the first MEMS layer andthe plurality of first-level electrodes; and forming a plurality ofsecond-level electrodes on the second MEMS layer and comprising asecond-level wire, wherein the second-level wire protrudes through thesecond MEMS layer to the first-level electrode or another first-levelelectrode.
 15. A method for manufacturing an integrated circuit (IC),the method comprising: forming an interconnect structure covering asubstrate, wherein the interconnect structure comprises a dielectriclayer, and further comprises multiple wires and multiple viasalternatingly stacked in the dielectric layer; forming a sacrificiallayer sunken into the dielectric layer and having a top surface that isflush with a top surface of the dielectric layer; forming amicroelectromechanical systems (MEMS) structure on the top surfaces ofthe sacrificial and dielectric layers, wherein the forming of the MEMSstructure comprises: depositing a first piezoelectric layer on the topsurfaces respectively of the sacrificial layer and the dielectric layer;forming an inter-device via extending through the first piezoelectriclayer to a top wire of the interconnect structure; and depositing asecond piezoelectric layer covering the inter-device via and the firstpiezoelectric layer; and removing the sacrificial layer after theforming of the MEMS structure to form a cavity in place of thesacrificial layer.
 16. The method according to claim 15, wherein theforming of the sacrificial layer comprises: performing an etch into theinterconnect structure to form a trench; depositing the sacrificiallayer filling the trench and covering the interconnect structure; andflattening and recessing a top surface of the sacrificial layer.
 17. Themethod according to claim 15, wherein the sacrificial layer comprises aconductive material.
 18. The method according to claim 15, wherein theforming of the sacrificial layer is restricted to temperatures less thanabout 450 degrees Celsius.
 19. The method according to claim 15, whereinthe forming of the MEMS structure further comprises: forming a pluralityof electrodes on the first piezoelectric layer and comprising anelectrode, wherein the electrode directly contacts the inter-device viaand is electrically coupled to the top wire of the interconnectstructure through the inter-device via.
 20. The method according toclaim 19, wherein a bottommost surface of the electrode is level with abottommost surface of the second piezoelectric layer.